Modeling of a SiGeSn quantum well laser

We present comprehensive modeling of a SiGeSn multi-quantum well laser that has been previously experimentally shown to feature an order magnitude reduction in the optical pump threshold compared bulk lasers. combine experimental material data obtained over last few years with k · p theory adapt transport, gain, and loss models this system (drift-diffusion, thermionic emission, gain calculations, free carrier absorption, intervalence band absorption). Good consistency is data, main mechanisms limiting performance are discussed. In particular, results indicate low non-radiative lifetime, 100 ps range for investigated stack, lower than expected ?-L energy separation and/or confinement play dominant role device properties. Moreover, they further emits transverse magnetic polarization at higher temperatures due absorption losses. To best our knowledge, first realized lasers, taking wealth accumulated past into account. The methods described paper pave way predictive new (Si)GeSn concepts.